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APT5015BVFR APT5015SVFR
500V
BVFR
32A 0.150
D3PAK
POWER MOS V (R)
FREDFET
TO-247
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
* Faster Switching * Lower Leakage * Avalanche Energy Rated * TO-247 or Surface Mount D3PAK Package
SVFR
D G S
* Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT5015BVFR_SVFR UNIT Volts Amps
500 32 128 30 40 370 2.96 -55 to 150 300 30 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 32 0.15 250 1000 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A
1-2005 050-5627 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5015BVFR_SVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF
4400 600 230 200 30 80 12 14 55 11
5280 840 350 300 45 120 25 30 80 20
ns nC
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
32 128 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
250 525 1.6 6.0 13 21
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.34 40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.54mH, R = 25, Peak I = 32A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05
PDM
1-2005
0.01 0.005
0.02 0.01 SINGLE PULSE
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5627 Rev A
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT5015BVFR_SVFR
60
ID, DRAIN CURRENT (AMPERES)
VGS=6V, 7V, 8V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
60 50 40 30 20 10 0
VGS=15V VGS=7V, 8V & 10V
6V
50 5.5V 40 30 5V 20 10 0 4.5V 4V
5.5V
5V
4.5V 4V
0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 60
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.5
V
GS
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
50 40 30 20 10 0
TJ = +125C
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.4 1.3 1.2 1.1 1.0 0.9
VGS=10V VGS=20V
TJ = +125C TJ = +25C TJ = -55C
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 35
ID, DRAIN CURRENT (AMPERES)
0
20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I = 0.5 I [Cont.]
D D
1.15 1.10 1.05 1.00 0.95 0.90 0.85
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
-50
2.5
V
GS
= 10V
2.0
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5627 Rev A
1-2005
APT5015BVFR_SVFR
200
ID, DRAIN CURRENT (AMPERES)
20,000 10S
OPERATION HERE LIMITED BY RDS (ON)
100 50
100S
C, CAPACITANCE (pF)
10,000 5,000 Ciss
10 5
1mS 10mS 100mS DC
Coss 1,000 500 Crss
1 .5
TC =+25C TJ =+150C SINGLE PULSE
.1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
300
16
VDS=100V VDS=250V
100 50 TJ =+150C TJ =+25C
12
VDS=400V
8
10 5
4
50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-247 Package Outline (BVFR)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline (SVFR)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532)
3
6.15 (.242) BSC
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
13.79 (.543) 13.99 (.551)
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
2.40 (.094) 2.70 (.106)
(Base of Lead)
1-2005
1.01 (.040) 1.40 (.055)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
050-5627 Rev A
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Source Drain Gate Dimensions in Millimeters (Inches)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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